High Purity MAX Special Ceramics Material Molybdenum Gallium Carbide Mo2Ga2C Powder, 99%

Molybdenum gallium carbide is a new participant of ceramic materials, which incorporates lots of benefits of steels and porcelains. Mo2Ga2C powder has incredibly exceptional heat mechanical properties.
Pureness: 99%
Bit Dimension: 200mesh, 400mesh

About Molybdenum Gallium Carbide Mo2Ga2C Powder:

Large band gap: Gallium molybdenum carbide has a band gap of up to 3.4 electron volts (eV), which allows it to maintain excellent stability in high-temperature and high-power applications. Because wide bandgap semiconductors have high thermal and chemical stability, GaMoC performs excellently in extreme environments such as high temperature, high pressure and high frequency.

High carrier mobility: Gallium carbide molybdenum has a high carrier mobility, giving it an advantage in manufacturing efficient electronic devices. Mobility is an important parameter that measures how fast carriers move in a material, and high mobility means that electrons can move quickly through the material, thus transferring more energy in the same amount of time.

Good chemical stability: Gallium carbide molybdenum has good chemical stability and can be stable in high temperatures and corrosive environments. This characteristic makes GaMoC a good choice for manufacturing electronic and optoelectronic devices that operate in high-temperature and corrosive environments.

Strong radiation resistance: Gallium carbide molybdenum has good radiation resistance and can remain stable in a high radiation environment. This property makes GaMoC an ideal material for manufacturing electronics used in space probes and equipment in the nuclear industry.

High thermal conductivity: Thermal conductivity is a parameter that measures the ability of a material to conduct heat, and a high thermal conductivity means that the material can quickly conduct heat away, thus keeping the temperature of the electronic device stable.

Good photoelectric performance: Gallium carbide molybdenum shows good photoelectric performance in photoelectric devices. It has a high light absorption coefficient and photoconductivity, which can be used to manufacture efficient photoelectric devices.

Can be applied to high-frequency and high-speed devices: Because gallium molybdenum carbide has high carrier mobility and thermal stability, it can be used to manufacture high-frequency and high-speed electronic devices, such as microwave devices, high-speed logic circuits and switching devices.

Applications of Molybdenum Gallium Carbide Mo2Ga2C Powder:

Electronic device field:

Gallium carbide molybdenum has been widely used in the field of electronic devices.  Compared with traditional silicon devices, gallium carbide molybdenum devices have higher operating frequency and lower energy loss. GaMoC also manufactures high-frequency wireless communications devices such as mobile phones, satellite communications and radar.

Solar cell field:

Gallium and molybdenum carbide have essential applications in the field of solar cells. As a comprehensive bandgap semiconductor material, GaMoC has high thermal and chemical stability and can work in high-temperature and corrosive environments. In addition, GaMoC also has high photoelectric conversion efficiency and stability, which can improve the power generation efficiency and life of solar cells. Therefore, GaMoC is regarded as one of the promising materials for solar cells.

Power Electronics:

Gallium molybdenum carbide also has essential applications in the field of power electronics. Power electronics is a technology for converting and controlling electrical energy, which is widely used in industry, transportation and home. GaMoC, as a comprehensive bandgap semiconductor material, has high thermal and chemical stability and can work in high-temperature and high-pressure environments. In addition, the game has a high switching speed and energy conversion efficiency, which can improve the performance and efficiency of power electronic devices. Therefore, GaMoC is regarded as one of the promising materials for power electronic devices.

Space exploration field:

Gallium carbide molybdenum also has essential applications in the field of space exploration. Space probes need electronics that can operate stably in extreme environments, with high performance and reliability. As a comprehensive bandgap semiconductor material, GaMoC has high thermal and chemical stability and can work stably under high temperatures and radiation. In addition, the GaMoC also has low energy loss and high-frequency performance, which can make high-performance space probes. Therefore, GaMoC is considered a promising material for space probes.

Production Method of Molybdenum Gallium Carbide Mo2Ga2C Powder:

Chemical Vapor Deposition (CVD) :

The method is to chemically react raw gas containing elements such as gallium, molybdenum and carbon at high temperatures to produce gallium and molybdenum carbide film. The specific steps are as follows:

(1) The raw material gas is passed into the reaction chamber, generally using metal molybdenum wire or molybdenum foil as the base, and the surface is coated with gallium or gallium alloy.

(2) The substrate is heated to a high temperature, which generally needs to reach more than 1000 ° C to melt the surface and produce a liquid film.

(3) At high temperatures, the raw material gas reacts with the liquid film to generate gallium carbide molybdenum film.

(4) After the reaction, the substrate is cooled and removed from the chamber to obtain gallium carbide molybdenum film.

The advantage of the CVD method is that it can prepare a uniform gallium and molybdenum carbide film on a large area, which is suitable for large-scale production. However, this method requires high-temperature equipment and high-purity raw materials, and the manufacturing cost is high.

Physical Vapor Deposition (PVD) :

Physical vapor deposition is a standard method for preparing gallium and molybdenum carbide. The method is to put elements such as gallium, molybdenum and carbon into a vacuum chamber and bombard the target with a high-energy beam, such as an electron beam, laser beam or ion beam, so that it evaporates and deposits on the substrate to form a gallium molybdenum carbide film. The specific steps are as follows:

(1) Put the target into the vacuum chamber, generally using metal or silicon carbide molybdenum targets.

(2) The base is placed at a certain distance from the target, using metal or silicon carbide molybdenum foil.

(3) By bombarding the target with a high-energy beam such as an electron beam, laser beam or ion beam, it evaporates and deposits on the substrate to form gallium carbide molybdenum film.

(4) After the reaction, the substrate is removed, and the gallium carbide molybdenum film is obtained.

The advantage of the PVD method is that high-purity gallium carbide molybdenum film can be prepared, and the equipment is relatively simple and easy to maintain. However, this method makes preparing a uniform film on a large area difficult, but it is suitable for small-scale production.

Epitaxial growth:

Epitaxial growth is a method of growing single-crystal gallium and molybdenum carbide films on a single-crystal substrate. The method is to contact the single-crystal substrate with the raw material gas containing gallium, molybdenum and carbon at high temperature and form a single-crystal gallium and molybdenum carbide film on the substrate through a chemical reaction and transport process. The specific steps are as follows:

(1) The single crystal substrate is placed in a high-temperature furnace, and silicon single crystal is generally used as the substrate.

(2) The raw material gas containing elements such as gallium, molybdenum and carbon is passed into the high-temperature furnace.

(3) At high temperatures, the raw material gas and the single-crystal substrate undergo chemical reactions and transport processes to form a single-crystal gallium molybdenum carbide film.

(4) After the reaction, the single-crystal substrate is removed, and the single-crystal gallium molybdenum carbide film is obtained.

The advantage of the epitaxial growth method is that high-quality single-crystal gallium and molybdenum carbide film can be prepared and suitable for large-scale production. However, this method requires high-temperature furnaces and high-purity raw materials, and the manufacturing cost is high.

Supplier of Molybdenum Gallium Carbide Mo2Ga2C Powder:

Synthetic Chemical Technology Co. Ltd., () is an established global chemical material manufacturer and supplier with over 12 years' experience in the 

production of  high-quality nanomaterials. These include boride powders, graphite or nitride particles, as well as sulfide and sulfide-based powders for 3D printing.

Contact us to send an inquiry if you're looking for chemical powder of high quality. (  sales5@nanotrun.com )

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