High Purity Gallium Nitride GaN powder CAS 25617-97-4, 99.99%

Description of Gallium Nitride Powder :

Gallium nitride is a compound with important physical and chemical properties, and its molecular formula is GaN. It is a kind of wide band gap semiconductor material with a high melting point, high hardness, excellent chemical stability, and high-temperature thermal stability.

In terms of physical properties, gallium nitride has a crystal structure. It belongs to the hexagonal crystal system, whose crystal structure is composed of one gallium atom and three nitrogen atoms. It has a density of 3.23g/cm3, a melting point of 2500 ° C, and a boiling point of 2700 ° C. Due to its high melting and boiling points, gallium nitride exhibits good stability at high temperatures.

In terms of chemical properties, gallium nitride is a stable compound with high corrosion resistance. It does not dissolve in or react with water. At room temperature, gallium nitride does not react with oxygen in the air. In addition, gallium nitride can also react with some metal elements to produce metal nitrides.

Gallium nitride has many applications. Because of its high melting and boiling points, it is widely used in the manufacture of high-grade refractory materials, high-temperature stoves, ceramics, and glass products. In addition, gallium nitride is also used in the manufacture of light-emitting diodes, lasers, power electronics, and other optoelectronic and semiconductor devices. These devices have many applications in communication, automotive, medical, and other fields.

In terms of preparation, gallium nitride can be prepared by a variety of methods, such as the reaction of gallium metal with ammonia and the reaction of silicon carbide with ammonia. Among them, the reaction of gallium metal with ammonia gas is a common preparation method, which needs to be carried out at high temperatures, and the obtained mixture of gallium nitride and hydrogen gas needs to be separated and purified.

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 Gallium Nitride Product Performance
The applications of GaN are wide-ranging. It has strong atomic bonds and a large direct bandgap. It also has high thermal conductivity and chemical stability (almost zero acid corrosion).

 Technical Parameters of Gallium Nitride GaN:

 Chemical Composition and Properties of Gallium Nitride GaN:

 Production Method of Gallium Nitride GaN Powder：

Gallium reacts with ammonia.

The reaction of gallium metal with ammonia is a common method for preparing gallium nitride. The reaction needs to be carried out at high temperatures and is generally prepared by a tube furnace or induction furnace. The specific steps are as follows:

The higher-purity gallium metal is placed in a tube furnace or induction furnace and heated until it melts.

Through high-purity ammonia gas, gallium metal reacts with ammonia gas to produce gallium nitride.

Adjust the ammonia flow rate and temperature, control the reaction speed, and prevent gallium metal from reacting too much with ammonia to produce gallium nitride and hydrogen.

After the reaction, the product is removed, cooled, and crushed to obtain gallium nitride products.

The advantage of this method is that the prepared gallium nitride has high purity and fine particle size, which is suitable for the field with high purity and particle size requirements. However, this method requires the use of high-purity metal gallium and ammonia, the production cost is high, and the need to use high-temperature equipment and the equipment requirements are high.

Silicon carbide and ammonia reaction

The reaction of silicon carbide with ammonia is also a common method for the preparation of gallium nitride. The reaction needs to be carried out at high temperatures and is generally prepared by a tube furnace or high-temperature furnace. The specific steps are as follows:

The purity of silicon carbide in the tube furnace or high-temperature furnace, heating to a certain temperature.

Through high-purity ammonia gas, the silicon carbide and ammonia gas reaction to produce gallium nitride.

Adjust the ammonia flow rate and temperature, control the reaction speed, and prevent silicon carbide from reacting too much with ammonia to produce gallium nitride and hydrogen.

After the reaction, the product is removed, cooled, and crushed to obtain gallium nitride products.

The advantages of this method are that the prepared gallium nitride has a high-purity fine particle size, silicon carbide is cheaper than gallium metal, and the cost is lower. However, this method requires the use of high-temperature equipment, higher requirements for equipment, and the production efficiency is low.

The heating reduction method

Thermal reduction is a commonly used method for the preparation of gallium nitride. The method is to pass nitrogen and excess ammonia gas into the graphite tube and heat it to 700~1000℃ so that the ammonia gas is reduced to nitrogen atoms and forms nitrogen fossil ink with graphite. The resulting product is then treated at a high temperature (above 1700℃) to remove unreacted ammonia and graphite to obtain gallium nitride products. The specific steps are as follows:

Put the graphite tube into the heating device and heat it to 700~1000℃.

Nitrogen and excess ammonia gas are passed into the graphite tube, so that ammonia gas is reduced to nitrogen atoms and forms nitrogen fossil ink with graphite.

The obtained product is treated at a high temperature (above 1700℃), unreacted ammonia and graphite are removed, and gallium nitride products are obtained.

The advantages of this method are that the gallium nitride prepared has high purity, fine particle size, and low requirements for equipment. However, this method requires the use of excessive ammonia and requires high-temperature treatment, and the production cost is high.

 Applications of Gallium Nitride GaN Powder  :

Power electronics field

As a kind of power electronic material, gallium nitride has been widely used in the field of power electronics. Gallium nitride has become one of the ideal materials for manufacturing high-power, high-temperature, and high-frequency electronic devices due to its excellent properties, such as high saturation electron velocity and high bonding energy.

In the field of power electronics, gallium nitride is widely used in the manufacture of power electronic devices, such as power diodes, power transistors, and field effect tubes. These power electronic devices play an important role in the power system, such as power conversion, power control, etc.

The field of optoelectronics

Gallium nitride is also widely used in the field of optoelectronics. Due to its advantages of high brightness and high reliability, gallium nitride has become one of the ideal materials for manufacturing efficient, high stability, and long-life LED.

In the field of optoelectronics, gallium nitride is widely used in the manufacture of LED lamps, displays, lasers, and other products. Among them, LED lamps have the advantages of high efficiency, energy saving, environmental protection, etc., and have become the mainstream products in the lighting market. The display has the advantages of high brightness, high contrast, and wide viewing Angle, which can meet various high-end display needs. Laser has the advantages of high precision, high speed, and high reliability and is widely used in information processing, communication, and other fields.

The field of high-temperature

Gallium nitride has the advantages of high-temperature stability and chemical stability, which makes it widely used in high-temperature fields. In the field of high temperature, gallium nitride is widely used in the manufacture of high-temperature stoves, high-temperature sensors, and other products.

In the field of high temperature, gallium nitride is widely used in the manufacture of high-temperature stoves, such as silicon-based gallium nitride stoves. These high-temperature stoves have the advantages of high efficiency, energy saving, environmental protection, etc., and can meet various high-temperature treatment needs. 

The military field

Gallium nitride is widely used in military fields because of its high hardness, high melting point, excellent chemical stability, and high-temperature thermal stability. In the military field, gallium nitride is widely used in the manufacture of missile warheads, rocket nozzles, and other products.

In the military field, the hardness and stability of gallium nitride make it one of the ideal materials for the manufacture of missile warheads. In addition, the high melting point and high-temperature stability of gallium nitride make it one of the ideal materials for the manufacture of rocket nozzles.

 Gallium Nitride GaN powder - Packing & Shipping
The packaging we use depends on the amount of gadolinium nitride (GaN) powder.
Powder packaging of gallium nitride, GaN: It is possible to vacuum pack 100g,500g or 1kg per bag, 25kg per barrel, or at your request.
Shipment of GaN powder, also known as gallium nitride: Upon receipt of payment, goods can be sent by sea, air or express as soon as practicable.


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