High Purity Indium Tin Oxide ITO Powder, 99.9%
Description of Indium Tin oxide ITO powder:
Indium tin oxide (In2O3) is a ternary metal oxide with a structure similar to zinc oxide. It is a direct bandgap semiconductor material with a wide bandgap width and high transparency. The properties of indium tin oxide are described in detail below.
The crystal structure of indium tin oxide is a cubic crystal system, and the space group is Fm3m. It has a lattice constant of a=0.5213nm and belongs to the hexagonal system with a space group of R3m. Indium tin oxide has a density of 7.16g/cm3 and a hardness of 5, which has high electrical insulation properties and chemical stability.
Indium tin oxide has excellent electrical conductivity, and its conductivity is less affected by temperature and humidity. At room temperature, indium tin oxide has an electrical conductivity of about 104S/m and is an N-type semiconductor material. In addition, indium tin oxide also has high optical transparency, with a transmittance of more than 80% in the visible light range. The band gap of indium tin oxide is about 3.4eV, which matches the maximum energy in the solar spectrum. Therefore, indium tin oxide can be used as an efficient photoelectric material for the manufacture of new energy devices such as solar cells. In addition, indium tin oxide can also be used as a gas-sensitive material and catalyst carrier and other applications.
Indium tin oxide has a wide range of applications. In the field of solar cells, due to their high transparency and good photoelectric performance, they can be used as window materials, back electrode materials, and other applications. In addition, indium tin oxide can also be used as a material for electronic devices, such as field-effect transistors. In the field of gas-sensitive materials, indium tin oxide can be used to detect trace substances in gases. In addition, indium tin oxide can also be used as a catalyst carrier and electrode material and in other fields.
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Technical Parameters of Indium Tin Oride ITO Powder
Certificate of ITO Nanoparticles-ppm(In2O3:SnO2=90wt%:10wt%)
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Purity
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Al
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Sb
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Cd
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Cu
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Fe
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Pb
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Ni
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Si
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Zn
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Co
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As
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P
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Ca
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Mg
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Bi
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99.99%
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1.88
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3.30
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1.00
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2.55
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3.50
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9.38
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1.00
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5.88
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2.55
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0.58
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1.48
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0.52
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1.39
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2.49
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9.12
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Production Method of Indium Tin Oxide ITO Powder:Direct oxidation process
The direct oxidation process is a method to obtain indium tin oxide by direct oxidation of indium metal. The process uses metal indium as raw material to carry out direct oxidation reactions in oxygen or air. The specific process is as follows: the metal indium is mixed with oxygen or air, and the oxidation reaction is carried out at a certain temperature to produce indium tin oxide. This method has the advantages of a simple process and low cost, but it also has some disadvantages, such as low product purity and easy to produce a lot of dust.
Tin salt method
The tin salt process is a method to obtain indium tin oxide by reacting tin salt with an oxidizing agent. The process takes tin salts (such as tin sulfate, tin nitrate, etc.) as raw materials. The specific process is as follows: the tin salt is mixed with an oxidizer, and the reaction is carried out at a certain temperature to produce indium tin oxide. This method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as high cost and high equipment requirements.
Solvent method
The solvent process is a method to obtain indium tin oxide by solvent extraction. The method uses indium-containing solution (such as indium chloride, indium sulfate, etc.) as raw material to obtain indium tin oxide by solvent extraction. The specific process is as follows: the indium-containing solution is mixed with the organic solvent, and the extraction reaction is carried out at a certain temperature to obtain the organic phase of indium tin oxide. This method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as high cost and high equipment requirements.
Electrolytic method
Electrolysis is a method to obtain indium tin oxide by electrolysis of indium-containing solution. The method takes an indium-containing solution (such as indium chloride, indium sulfate, etc.) as raw material, reduces indium ions in the solution to indium metal through an electrolytic process, and then converts indium metal to indium tin oxide through an oxidation reaction. The specific process is as follows: the indium-containing solution is mixed with the electrolyte, and the electrolytic reaction is carried out in the electrolytic cell to obtain the metal indium. Then, the metal indium is mixed with oxygen or air and oxidized at a certain temperature to produce indium tin oxide. This method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as high cost and high equipment requirements.
Chemical vapor deposition
Chemical vapor deposition is a method to obtain indium tin oxide by chemical vapor deposition. The process uses metal indium or its compounds as raw materials and reacts with oxygen or air at high temperatures to produce indium tin oxide. The specific process is as follows: the metal indium or its compounds are heated to a certain temperature, mixed with oxygen or air, and reacted at a certain temperature to generate a vapor of indium tin oxide. Solid particles of indium tin oxide are then obtained by cooling and condensation. This method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as high cost and high equipment requirements.
Application of Indium Tin Oxide ITO Powder:
Solar cell
Indium tin oxide, as a wide-bandgap semiconductor material, has high transparency and good photoelectric properties and is widely used in the field of solar cells. In addition, indium tin oxide can also be used to manufacture dye sensitizers and photocatalysts for solar cells.
Electronic device
Indium tin oxide, as an excellent semiconductor material, is widely used in the field of electronic devices. In electronic devices, indium tin oxide can be used as a semiconductor material for field-effect transistors, diodes, and other devices, which have the advantages of high sensitivity and low power consumption. In addition, indium tin oxide can also be used to manufacture integrated circuits and microelectronic devices.
Gas sensitive material
Indium tin oxide has high chemical stability and gas-sensitive properties and is widely used in the field of gas-sensitive materials. In gas-sensitive materials, indium tin oxide can be used to detect trace substances in gases, such as hydrogen, carbon monoxide, carbon dioxide, etc. In addition, indium tin oxide can also be used to manufacture high-temperature gas-sensitive materials and optical gas-sensitive materials.
Catalyst support
Indium tin oxide has a high specific surface area and good chemical stability and is widely used in the field of catalyst support. In the catalyst carrier, indium tin oxide can be used as the carrier of metal catalyst to improve the activity and stability of the catalyst. In addition, indium tin oxide can also be used to manufacture heterogeneous catalysts and photocatalysts.
Optical material
Indium tin oxide has high transparency and good optical properties and is widely used in the field of optical materials. In optical materials, indium tin oxide can be used to manufacture optical lenses, mirrors, and other optical components to improve the performance and accuracy of optical components. In addition, indium tin oxide can also be used to manufacture optical communication devices such as optical fiber and optical fiber connectors.
Biomedical materials
Indium tin oxide has excellent biocompatibility and chemical stability and is widely used in the field of biomedical materials. In biomedical materials, indium tin oxide can be used to manufacture drug carriers and drug sustained-release agents, etc., to improve the effect and safety of drug therapy. In addition, indium tin oxide can also be used to manufacture biomedical devices such as biosensors and biochips.
Indium Tin Oride ITO Powder Storage:
Indium Tin Oxide should always be kept in a dry, cool, and sealed environment. It should not be exposed to air.
Shipping and Packing of ITO Powder indium Tin Oxide:
You can pack it in two plastic bags with the inside.
Indium Tinoxidide ITO Powder packaging: Vacuum packing 100g, 500g, 1kg/bag or 25kg/barrel. Or as you request.
Indium Tin Oride ITO Powder shipping shipping information: could be sent by sea or air as soon as the payment has been received.
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You can contact us to request high-quality ITO powder. (sales5@nanotrun.com)
Indium Tin Oxide ITO Powder Properties
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Other Titles
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ITO powder indium Tin Oxide.
In2O3 :SnO2 - 90:10 Wt%, C.A. 71243-84-0. In.O.Sn. In1.69Sn0.15O2.85.
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50926-11-9
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Compound Formula
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In2O5Sn
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Molecular Weight
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428.34
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Appearance
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From pale yellow to greenish powder
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Melting Point
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1526-1926 degC
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Solubility In Water
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Insoluble
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Density
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7.14 g/m3
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Purity
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99.90%
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Particle size
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20nm
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Bold point
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N/A
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Specific Heat
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N/A
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Thermo Conductivity
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N/A
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Thermal Expansion
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N/A
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Young's Module
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N/A
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Exact Mass
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429.684524
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Monoisotopic
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429.684524
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Indium Tan Oxide ITO powder Health & Safety Info
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Safety Notice
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Alert
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Hazard Statements
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H315-H319-H335
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Flashing Point
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N/A
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Hazard Codes
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Xi
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Risk Codes
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36/37/38
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Safety statements
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26
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RTECS #
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N/A
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Transport Information
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N/A
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WGK Germany
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3
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