High Purity Antimony Selenide Sb2Se3 Powder CAS 1315-05-5 99.9%
Antimony triselenide (Sb2Se3) is a chemical compound that crystallizes inside an orthorhombic area group. Sb2Se3 is remarkably similar to the topological insulator Sb2Te in terms of physical and structural similarities.
Particle Size: powder, -100 mesh
Description of Antimony Selenide sb2Se3 powder
:
Antimony triselenide has the chemical composition Sb2Se3. It is found as the antimony triselenide sulfide mineral pyroxene. The orthotic space group of this substance makes it possible to exist. This compound has an oxidation status of +3 for the antimony and -2 for selenium forms. This compound exhibits covalent bonding properties. It can be shown by its blackness as well as the semiconductor properties. The low-frequency permittivity of this material (e0), is 133 along C-axis at ambient temperature. Also, the bandgap at this temperature of 1.18eV is abnormally high. At a melting temperature of 885 K, antimony can react with selenium to form antimony triselenide.
Sb2Se3, which is a binary monophase chemical, has high raw material reserves and is low in toxicity. It has a wide bandgap of 1.15eV, a large light absorption coefficient, and comparatively low long crystal temperatures. These properties make it ideal for making low-cost thin-film solar cells. The theoretical photoelectric conversion rate can exceed 30%. Abbaworld, a global trusted brand.
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Antimony Selenide sb2Se3 powder properties:
Antimony selenide has the chemical formula Sb2Se3 with a molecularweight of 480.38.
99.99% antimony triselenide powder; Sb2Se3 antimony selenide powder
Specification Antimony Selenide sb2Se3 powder :
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Antimony Selenide, MF
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Sb2Se3
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Antimony Selenide Color
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Black, dark red
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Antimony Selenide Weight
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480.38
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Antimony Selenide Melting point
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611
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Antimony Selenide CAS No.
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1315-05-5
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Antimony Selenide EINECS Nr.
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215-256-0
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Antimony Selenide density
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5.843 g/cm3
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Technical Parameters of Antimony Selenide SS3 Powder -
COA Antimony Selenide
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Purity
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99.99%
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Cu
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<=5ppm
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Ni
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<=5ppm
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Zn
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<=10ppm
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<=5ppm
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Ca
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<=5ppm
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Fe
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<=10ppm
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Cr
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<=3ppm
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Co
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<=5ppm
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Na
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<=5ppm
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Production Method of Antimony Selenide sb2Se3 powder:Direct synthesis
Direct synthesis is a commonly used method for producing antimony selenide, which directly reacts with antimony and selenide at high temperatures to obtain antimony selenide. The specific steps are as follows:
The higher-purity antimony and selenium elements are prepared; antimony is usually present in bulk or granular form, and selenium is generally present in powder form.
Place antimony blocks or particles and selenium powder into a quartz tube, ensuring both ends are closed.
The quartz tube is placed in a heating furnace and heated to the appropriate temperature (usually 600-800 ° C).
Keep the heat high for some time (e.g., several hours) to allow the antimony and selenium to react fully.
After the reaction, the quartz tube is removed, cooled, and opened, and the resulting antimony selenide crystals can be seen.
The advantages of direct synthesis are simple operation and easy availability of raw materials. However, it should be noted that the purity of antimony selenide obtained by this method may need to be higher, and further purification is required. In addition, the direct synthesis method has a higher cost and is unsuitable for mass production.
Electrolysis
Electrolysis is a method of preparing compounds by electrolysis of a solution, which can be used to produce high-purity antimony selenide. The specific steps are as follows:
Dissolve an appropriate amount of antimony salt (such as antimony trioxide) and selenium salt (such as selenite) in a solvent (such as water) to obtain a mixed solution.
The mixture is poured into the cell, and a voltage is applied to both electrodes.
During electrolysis, antimony and selenium ions are reduced to antimony and selenium on the anode and deposited on the cathode to form antimony selenide.
The antimony selenide deposited on the cathode is collected for cleaning and drying.
The advantage of electrolysis is that high-purity antimony selenide can be prepared, and the cost is relatively low, which is suitable for large-scale production. In addition, antimony selenide can be controlled by electrolysis by adjusting the solution concentration and electrolytic conditions. However, it should be noted that the electrolysis method requires electrolytic equipment, and the operation is more complicated.
Chemical vapor deposition method
Chemical vapor deposition (CVD) is a commonly used method for preparing compounds, which can convert gas or steam into solid compounds by chemical reaction under certain conditions. This method can be used to produce high-purity antimony selenide. The specific steps are as follows:
Elements or compounds of antimony and selenium are introduced into the reaction chamber as gases or vapors.
It is heated in the reaction chamber to the appropriate temperature (usually between 200 and 500 ° C) to chemically react to the elements or compounds of antimony and selenium.
By controlling the reaction conditions (such as temperature, pressure, gas flow, etc.), the reaction products are deposited in the cooler or collector to obtain antimony selenide crystals.
The advantage of chemical vapor deposition is that high-purity antimony selenide can be prepared. In addition, the method can also be carried out at lower temperatures, avoiding the problems caused by high-temperature synthesis. However, it should be noted that chemical vapor deposition requires the use of complex equipment and high-purity raw materials. Hence, the cost is higher and unsuitable for large-scale production.
Applicationes of Antimony Selenide sb2Se3 powder
:
Electronic field
In the field of electronics, antimony selenide, as an excellent semiconductor material, is widely used in the manufacture of various electronic devices. Among them, the most widespread applications include:
Transistor: Antimony selenide has the advantages of high mobility and low noise, so it has a wide range of applications in high-speed logic circuits, radio frequency, and microwave.
Integrated circuits: Due to the adjustable band gap of antimony selenide, its electrical properties can be optimized by changing the material composition, resulting in a broader range of circuit designs and higher performance. Therefore, antimony selenide has many applications in microelectronics and nanoelectronics. It is used to manufacture a variety of integrated circuits, including high-speed logic circuits, radio frequency, and microwave circuits.
Photoelectric devices: Because antimony selenide has good absorption performance for light, it can be used to manufacture various photoelectric devices, such as photodiodes, phototransistors, and photoelectric integrated circuits.
Solar cells: Antimony selenide can be used to make high-efficiency solar cells, which have a wide range of applications in photovoltaic power generation. In addition, due to its high light absorption capacity, antimony selenide is also used to manufacture efficient and low-cost solar cells, thus contributing to the field of clean energy.
Optical field
In the optical field, antimony selenide also has a wide range of applications. Among them, the most widespread applications include:
Optical devices: Since antimony selenide has the advantages of high light transmittance and low light absorption, it can be used to manufacture various optical devices, such as lenses, prisms, and mirrors. These optical devices have a wide range of applications in optics, laser, and imaging.
Infrared detector: Because antimony selenide absorbs infrared light, it can manufacture infrared detectors, such as infrared sensors and imagers.
Energy sector
In the field of energy, antimony selenide is also widely used. Among them, the most widespread applications include:
Energy storage batteries: Antimony selenide can also be used to make efficient energy storage batteries, which have many applications in fields such as power storage and emergency energy.
Fuel cell: Antimony selenide can be used as a catalyst for fuel cells to improve the efficiency and life of fuel cells. In addition, due to its unique electronic structure, bismuth can be used to design and optimize catalysts to enhance their efficiency and stability. This application is significant for realizing sustainable energy production and reducing environmental pollution.
Semiconductor field
In the semiconductor field, antimony selenide, as an excellent semiconductor material, is widely used in the manufacture of various semiconductor devices. Among them, the most widespread applications include:
Photoelectric devices: Because antimony selenide has good absorption performance for light, it can be used to manufacture various photoelectric devices, such as photodiodes, phototransistors, and photoelectric integrated circuits.
Integrated circuits: Antimony selenide can manufacture key components in integrated circuits, such as field-effect transistors, logic circuits, etc. Due to the adjustable band gap of antimony selenide, its electrical properties can be optimized by changing the material composition to meet the needs of different applications. In addition, because of its high thermal conductivity and good electrical insulation properties, bismuth-based materials can also be used to make high-temperature, high-frequency, high-power microwave devices and high-sensitivity infrared detectors.
Antimony Selenide sb2Se3 powder storage conditions:
Antimony Selenide should always be stored in an airtight container. You should also avoid stressing the product.
Packing and Shipping of Antimony Selenide sb2Se3 powder :
Antimony Selenide Packaging: Vacuum Packing, 1kg/bag 25kg/barrel or on your Request
Antimony Selenide
shipping:
Could be sent by sea or air as soon as possible after receipt of payment.
Antimony Selenide Properties
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Other Titles
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Antimony(III) selenide, diantimony triselenide,
antimony triselenide, Sb2Se3 powder
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1315-05-5
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Compound Formula
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Sb2Se3
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Molecular Weight
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480.4
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Appearance
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Gray Black Powder
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Melting Point
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611
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Boiling Point
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N/A
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Density
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5.81 g/cm3
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Solubility of H2O
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N/A
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Exact mass
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481.557201
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Antimony Selenide Health & Safety Information
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Signal word
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Danger
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Hazard Statements
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H301-H311-H315-H319-H331-H335
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Hazard Codes
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T
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Risk Codes
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26-36/37/39-45
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Safety statements
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26-36/37/39-45
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Transport Information
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UN 1549 6.1/PG3
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