Gallium Nitride, or GaN, is a mechanically and heat-resistant semiconductor compound. In its pure form, it has a band-gap of 3.4 eV. Purity: 99.99% Gallium Nitride GaN: Gan Gallium Nitride This is a semiconductor compound that is mechanically
Tungsten rod, also known as Tungsten alloyrod. This is made by reworking metal powders at high temperatures with special high-temperature powdermetallurgy methods. It exhibits good thermal conductivity and a low thermal expansion coefficient.
The original molecular Sieve-Activated Powder is the original molecular Sieve powder after being heated at high temperature to remove water in the channel. This powder has strong dispersion activity and strong adsorption. About Molecular sieve activate.
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