High Purity Bismuth Telluride Powder Bi2Te3 Cas 1304-82-1,99.99%
Bismuth Telluride is a grey powder having the molecular structure Bi2Te3. Bismuth telluride can be used as a semiconductor material, with high electrical conductivity and low thermal conductivity.
Particle Size: -80mesh and -100mesh
Purity: 99.99%
Description of Bismuth Telluride powder Bi2Te3
Powder
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Bismuth Telluride is a grey powder having the molecular form Bi2Te3. Bismuth informuride is a semiconductor substance with high electrical conductivity and low thermal conductivity. Although it is not dangerous, large quantities can cause death. The surface of this material will allow electrons and heat to flow on it without consuming any energy at room temperature. This can increase the speed and efficiency of your computer chips.
Bismuth Telluride is a semiconductor compound of elements VI, V, and I of the leading group—a triangular crystal with a unit cell that is a homophobic hexahedron. The lattice constant for this compound semiconductor is 1.0473nm. The density of the unit cell is 7.8587g/cm3. 585degC is the melting point. Various ionic-bond components can be combined by covalent bond.
Bismuth telluride has an indirect bandgap semiconductor of 0.145eV. The bandgap is at room temperature. There are electron and hole mobility of 0.135, 4.4x10-2m2/ (V*s), and a thermoelectricity coefficient of 1.6x10-3K. If you are interested in Bismuth Telluride Powder, Bi2Te3 powder, or bulk purchase, please inquire.
Bismuth Bi2Te3 powder features: Bismuth-telluride is a semiconductor substance with high but low thermal conductivity. Although it is not a very dangerous substance, the high number of ingestions could pose a severe danger. The material allows electrons to travel at room temperatures without any energy, which can increase chip performance and efficiency.
Bismuth Telluride Powder Bi2Te3:
Product
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Purity
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Particle size
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The color of the sky
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The Shape
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Density
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Energy gap
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Molecular mass
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Melting point
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Thermo conductivity
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Tr-Bi2Te3
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99.99%-99.9999%
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100mesh
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Gray
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powder, granule block
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7.8587g.cm3
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0.145eV
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800.76
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575
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0.06 W/cmK
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You can order different products depending on your requirements.
How Bismuth Telluride Puffer Bi2Te3 is it made?
Direct synthesis
Direct synthesis is a standard method for bismuth telluride production. Bismuth telluride is obtained by the immediate reaction of bismuth and telluride at high temperatures. The specific steps are as follows:
The purer elements of bismuth and tellurium are prepared; bismuth is usually present in bulk or particle form, and tellurium is generally present in powder form.
Place the bismuth blocks or particles and tellurium powder into the quartz tube, ensuring the ends are closed.
The quartz tube is placed in a heating furnace and heated to the appropriate temperature (usually 600-800 ° C).
It is kept at a high temperature for some time (e.g., several hours) to allow the bismuth and tellurium to react fully.
After the reaction, the quartz tube is removed, cooled, and opened to reveal the resulting bismuth telluride crystals.
The advantages of direct synthesis are simple operation and easy availability of raw materials. However, it should be noted that the purity of bismuth telluride obtained by this method may need to be higher, and further purification is required. In addition, the direct synthesis method has a higher cost and is unsuitable for mass production.
Electrolysis
Electrolysis is a method of preparing compounds by electrolysis of a solution, which can be used to produce high-purity bismuth telluride. The specific steps are as follows:
Dissolve an appropriate amount of bismuth salts (such as bismuth nitrate) and tellurium salts (such as tellurium chloride) in a solvent (such as water) to obtain a mixed solution.
The mixture is poured into the cell, and a voltage is applied to both electrodes.
During electrolysis, bismuth and tellurium ions are reduced to bismuth and tellurium on the anode and deposited on the cathode to form bismuth telluride.
The bismuth telluride deposited on the cathode is collected for cleaning and drying.
The advantage of electrolysis is that high-purity bismuth telluride can be prepared, and the cost is relatively low, which is suitable for large-scale production. In addition, bismuth telluride can be controlled by electrolysis by adjusting the solution concentration and electrolytic conditions. However, it should be noted that the electrolysis method requires electrolytic equipment, and the operation is more complicated.
Chemical vapor deposition method
Chemical vapor deposition (CVD) is a commonly used method for preparing compounds, which can convert gas or steam into solid compounds by chemical reaction under certain conditions. This method can be used to produce high-purity bismuth telluride. The specific steps are as follows:
Bismuth and tellurium elements or compounds are introduced into the reaction chamber as gases or vapors.
In the reaction chamber, heating to the appropriate temperature (usually between 200 and 500 ° C) causes the bismuth and tellurium elements or compounds to react chemically.
By controlling reaction conditions (such as temperature, pressure, gas flow, etc.), the reaction products are deposited in a cooler or collector to obtain bismuth telluride crystals.
The advantage of CVD is that high-purity bismuth telluride can be prepared, and the particle size and morphology of bismuth telluride can be controlled by controlling the reaction conditions. In addition, the method can also be carried out at lower temperatures, avoiding the problems caused by high-temperature synthesis. However, it should be noted that chemical vapor deposition requires the use of complex equipment and high-purity raw materials. Hence, the cost is higher, and it is not suitable for large-scale production.
Applications of Bismuth Telluride Pul Powder Bi2Te3 -
Electronic field
In electronics, bismuth telluride, as an excellent semiconductor material, is widely used to manufacture various electronic devices. Among them, the most widespread applications include:
Transistor: Bismuth telluride has the advantages of high mobility and low noise, so it has a wide range of applications in high-speed logic circuits, radio frequency, and microwave.
Integrated circuits: Due to the adjustable band gap of bismuth telluride, its electrical properties can be optimized by changing the material composition, allowing for a broader range of circuit designs and higher performance. Therefore, bismuth telluride has many applications in microelectronics and nanoelectronics. It is used to manufacture a variety of integrated circuits, including high-speed logic circuits, radio frequency, and microwave circuits.
Photoelectric devices: Because bismuth telluride has good light absorption properties, it can manufacture various photoelectric devices, such as photodiodes, phototransistors, and integrated circuits.
Solar cells: Bismuth telluride can be used to make high-efficiency solar cells, which have a wide range of applications in photovoltaic power generation.
Optical field
In the optical field, bismuth telluride also has a wide range of applications. Among them, the most widespread applications include:
Optical devices: Bismuth telluride has the advantages of high light transmission and low light absorption, so it can be used to manufacture various optical devices, such as lenses, prisms, and mirrors. These optical devices have a wide range of applications in optics, laser, and imaging.
Infrared detectors: Because bismuth telluride has a good absorption of infrared light, it can be used to manufacture infrared detectors, such as infrared sensors and infrared imagers.
Energy sector
In the energy field, bismuth telluride also has a wide range of applications. Among them, the most widespread applications include:
Energy storage batteries: Bismuth telluride can also be used to make efficient energy storage batteries, which have many applications in fields such as power storage and emergency energy.
Fuel cell: Bismuth telluride can be used as a catalyst for fuel cells, improving the efficiency and lifetime of fuel cells. In addition, due to its unique electronic structure, bismuth can be used to design and optimize catalysts to enhance their efficiency and stability. This application is significant for realizing sustainable energy production and reducing environmental pollution.
Semiconductor field
In the semiconductor field, bismuth telluride, as an excellent semiconductor material, is widely used to manufacture various semiconductor devices. Among them, the most widespread applications include:
Photoelectric devices: Because bismuth telluride has good light absorption properties, it can manufacture various photoelectric devices, such as photodiodes, phototransistors, and integrated circuits.
Integrated circuits: Bismuth telluride can manufacture key components in integrated circuits, such as field-effect transistors, logic circuits, etc. Due to the adjustable band gap of bismuth telluride, its electrical properties can be optimized by changing the material composition to meet the needs of different applications. In addition, because of its high thermal conductivity and good electrical insulation properties, bismuth-based materials can also be used to make high-temperature, high-frequency, high-power microwave devices and high-sensitivity infrared detectors.
Storage condition of Bismuth powdered telluride Bi2Te3 powder:
Bi2Te3 Powder dispersion performance will be affected by dampness. Therefore, Bismuth informuride powder Bi2Te3 must be vacuum packed and kept dry in a cool place. Bismuth should not be exposed to direct air. Additionally, it is important to avoid stressing the Bi2Te3 Powder.
Packing & Shipping Bismuth telluride powder Bi2Te3:
There are many packing options available depending on the Bismuth powder Bi2Te3 quantity.
Packing of bismuth telluride powder B2Te3 in vacuum, 100g, 500g and 1kg/bag. Or as you request.
Shipping Bismuth telluride powder B2Te3 powder: could send out via sea or air as soon after receipt of payment.
Bismuth Telluride Properties
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Other Titles
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dibismuth tritelluride, bismuth(III) telluride, bismuth sesquitelluride,
Bismuth tritelluride (Bi2Te3) powder
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1304-82-1
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Compound Formula
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Bi2Te3
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Molecular Weight
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800.76
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Appearance
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Gray Black Powder
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Melting Point
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585
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Boiling Point
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N/A
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Density
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7.64-7.74 g/cm3
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Solubility of H2O
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N/A
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Exact Mass
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801.674797
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Bismuth Telluride Safety & Health Information
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Signal word
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Alert
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Hazard Statements
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H302+H312+H332-H315-H319-H335
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Hazard Codes
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Xi
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Risk Codes
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N/A
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Safety statements
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N/A
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Transport Information
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UN 3284 6.1/III
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