Gallium Telluride is an organic compound that has the chemical formula GaTe. It's a gray-black powder at normal temperature and pressure. Purity: 99.99%
Particle Size: -100 Mesh

Description of Gallium Telluride GaTe Powder :

Property and structure

Gallium telluride is a group Ⅲ-Ⅵ compound semiconductor material composed of gallium and tellurium elements. Its crystal structure is sphalerite with lattice constants of a=0.6056nm and c=0.6482nm. In this structure, the gallium atoms are located in the tetrahedral gap center of the lattice, while the tellurium atoms are located in the octahedral gap center.

Physical property

Gallium telluride has a higher hardness of about 7.5 Mohs. It has a direct bandgap characteristic with a bandgap width of approximately 1.9eV. In addition, gallium telluride has high optical transparency, with a transmittance greater than 90% in the visible range.

Chemical stability

Gallium telluride shows good chemical stability at room temperature and pressure and can resist the attack of most acids and bases. However, it will gradually be eroded under the action of strong oxidants such as nitric acid and perchloric acid.

Gallium Telluride GaTe Pulp Performance :

Gallium Telluride (inorganic compound) is a grey-black powder that can be found at normal temperatures and pressures.

Technical Parameters of Gallium Telluride GaTe Pulp :

Product Name	MF	Purity	Particle Size	Molecular Weight	Melting Point	The color of the sky
Gallium Telluride	GaTe	99.99%	-100 Mesh	192.98	1240	Gray Black

Production Method of Gallium Telluride GaTe Powder：

Chemical Vapor Deposition (CVD)

CVD is a commonly used method for preparing gallium telluride by reacting compound vapors containing gallium and tellurium at high temperatures to produce a thin film of gallium telluride. The CVD method allows the thickness and structure of the film to be controlled as needed, and gallium telluride films can be grown on different substrates, such as glass, silicon, and metal. The main advantage of the CVD method is the ability to prepare high-quality gallium telluride films. Still, the equipment cost of this method is higher and requires high temperature and vacuum conditions, so the manufacturing cost is higher.

Molecular beam epitaxy (MBE)

MBE is a commonly used method for preparing a single crystal material by heating the source material to a high enough temperature that it evaporates into molecular beams, which crystallize on a substrate and grow into a single crystal material. The MBE method can produce high-quality single-crystal materials, but the equipment cost is high, and the growth rate is slow, so it is unsuitable for large-scale production.

Solution method

The solution method is a low-cost production method in which a compound of gallium and tellurium is dissolved in an organic solvent; then, the solution is coated on a substrate, which is dried and heat-treated to produce a thin film of gallium telluride. The solution method has the advantages of simple equipment and low manufacturing cost. Still, the quality of gallium telluride films prepared by this method could be better and needs further improvement.

Electrochemical deposition method

Electrochemical deposition is a method of preparing gallium telluride by electrolysis of compounds containing gallium and tellurium in an electrolyte. This method can grow gallium telluride films on different substrates, such as glass, plastic, etc. The equipment cost of the electrochemical deposition method is low, and the preparation speed is fast. Still, this method needs to control the concentration, the current density, and other parameters, so it needs further improvement.

Sputtering method

The sputtering method is a method of bombarding the surface of the target with high-energy particles so that the atoms or molecules on the surface of the target are sputtered out and then deposited on the substrate as a film. High-quality gallium telluride films can be prepared by sputtering. Still, the equipment cost of this method is high, and equipment such as high-energy particle accelerators and vacuum systems are required.

Applicationes of Gallium Telluride GaTe Powder :

Solar cell

Gallium telluride is the most widely used in the field of solar cells. Due to its wide direct band gap and high optical transparency, gallium telluride can efficiently absorb sunlight and convert it into electricity. In addition, the chemical stability of gallium telluride also enables it to work under harsh environmental conditions. Therefore, gallium telluride is widely used to manufacture efficient and durable solar cells, especially in space and ground-based solar power plants.

LED

The wide direct band gap and high optical transparency of gallium telluride make it an ideal material for manufacturing LEDs. Compared with traditional LEDs, LEDs using gallium telluride materials can emit higher brightness and more pure color light while having a longer life and higher reliability. Therefore, gallium telluride LEDs are widely used in automotive, construction, and display fields.

Photodetector

Because of its wide direct band gap and high optical transparency, gallium telluride is an ideal material for manufacturing photodetectors. Especially in extreme environments such as high speed and high temperature, gallium telluride photodetectors have excellent performance. Therefore, they are widely used in communications, aerospace, and industrial automation.

Infrared optics

Because of its ability to penetrate specific wavelengths of infrared light, gallium telluride is used to manufacture infrared Windows and optical devices for military, meteorological, and astronomical observations.

Electronic device

In addition to the above applications, gallium telluride is used to manufacture electronic devices such as field-effect transistors, diodes, and integrated circuits. Due to its excellent electrical properties and stability, the application of gallium telluride in electronic devices constantly expands.

Gallium Telluride GaTe Pulver Storage Conditions:
Weak reunions can adversely affect GaTe powder's dispersion and usage performance. Gallium telluride GaTe should therefore be stored in vacuum bags and kept dry in a cool place. GaTe powder shouldn't be exposed to stress.

Shipping and Packing of Gallium Telluride GaTe GaTe Powder:
We offer many packing options that are dependent on the quantity of gallium Telluride GaTe.
Packing of Gallium Telluride GaTe Powder You can vacuum pack 100g, 500g, 1kg/bag or 25kg/barrel. Or as you request.
Galium Telluride GaTe Powder Shipping: Receive payment receipt and you can have your order shipped by mail, air or express.

Gallium Telluride Properties
Other Titles	Galium telluride powder.
	12024-14-5
Compound Formula	GaTe
Molecular Weight	197.3
Appearance	Gray Black Powder
Melting Point	824
Boiling Point	N/A
Density	5.44 g/cm3
Solubility of H2O	N/A
Exact Volume	198.832
Silver Telluride Safety & Health Information
Signal word	N/A
Hazard Statements	N/A
Hazard Codes	N/A
Risk Codes	N/A
Safety statements	N/A
Transport Information	N/A

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