Germanium Telluride's chemical formula is GeTe with a molecularweight of 200.24. It is important as a semiconductor material of the group II-VI. Purity: 99.99%
Particle Size: -100 Mesh

About Germanium Telluride GeTe Powder :

Crystal structure

The crystal structure of germanium telluride is similar to that of silicon and germanium, and both belong to the cubic crystal system. In the crystal structure of germanium telluride, they are forming a tetrahedral structure. This structure is different from the crystal structure of silicon and germanium because they are direct bandgap semiconductors with high light absorption coefficients and light solid response.

Electronic properties

Germanium telluride is a direct band gap semiconductor with a band gap energy of about 0.6-0.7 eV. Because of its natural band gap properties, germanium telluride is widely used in optoelectronic devices. In addition, germanium telluride has a high electron mobility of about 1000 cm²/V·s, which makes it a potential application in high-speed electronic devices.

Thermoelectric properties

The thermoelectric properties of germanium telluride also make it widely used in thermoelectric conversion devices. It has a high Seebeck coefficient of about 400 μV/K, which allows it to convert heat energy into electricity. In addition, germanium telluride has a high resistivity of about 10-4 Ω·cm, which makes it excellent thermal stability under high-temperature conditions.

Optical properties

Germanium telluride has high transmittance and light solid absorption capacity in the infrared region, so it is widely used in infrared detectors. In addition, due to its direct bandgap properties, germanium telluride has potential applications in optical modulators and switches.

Magnetic properties

Although germanium telluride itself is not a magnetic material, it can be made ferromagnetic by doping certain elements, such as Mn. This makes it a potential application in magnetic memory devices.

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Germanium Telluride Powder Product Performance :

Germanium Telluride has the chemical composition GeTe. It is very stable in air.

Technical Parameter of Germanium Telluride geTe powder :

Product name	MF	Purity	Size of the particle	Molecular Weight	Density	The color of the sky
Germanium Telluride	GeTe	99.99%	-100 Mesh	200.24	6.14 g/cm3	Gray Black

Production Method of Germanium Telluride GeTe Powder：

Solid phase reaction

Solid-state reaction is a standard method for preparing germanium telluride. The technique is to mix germanium powder and tellurium powder according to a particular proportion and then react at high temperatures. During the reaction, the atoms of germanium and tellurium diffuse with each other to form a Ge-Te solid solution. With the progress of the reaction, the composition of the Ge-Te reliable solution gradually deviates from the stoichiometric ratio, and finally, GeTe compounds are formed. The advantages of the solid-state reaction method are a simple preparation process and low cost, which is suitable for large-scale production. However, the disadvantage of this method is that the purity of the product could be higher, and further purification is required.

Vapor deposition method

Vapor deposition is a method for preparing high-performance germanium telluride. In this method, the vapor of germanium and tellurium is reacted at high temperatures to form GeTe compounds. The advantage of vapor deposition is that high-purity GeTe compounds can be prepared, and the resulting products have fewer crystal structures and defects and better properties. However, the disadvantage of this method is that the preparation conditions are high, the cost is high, and it is not suitable for large-scale production.

Sol-gel method

The sol-gel method is a standard method for preparing nanomaterials. The technique is to dissolve the alcohols or inorganic salts of germanium and tellurium in the solvent to form a uniform sol. Then, through heating or the action of a catalyst, the solvent in the sol evaporates to form a gel. After the gel is dried and heat treated, GeTe compounds are obtained. The advantage of the sol-gel method is that it can prepare nano-sized GeTe compounds with high purity, the crystal structure and defects of the obtained products are less, and the properties are better. However, the disadvantage of this method is that it is easy to introduce impurities in the preparation process, the preparation conditions are higher, and the cost is higher.

Chemical vapor deposition

Chemical vapor deposition (CVD) is a method for preparing high-performance thin film materials. In this method, the vapor of germanium and tellurium is reacted with the reaction gas at high temperatures to form a thin film of GeTe compounds. The advantage of CVD is that high-purity and high-performance GeTe compound films can be prepared, and the resulting products have fewer crystal structures and defects and better properties. However, the disadvantage of this method is that the preparation conditions are high, the cost is high, and it is not suitable for large-scale production.

Electrolytic method

Electrolysis is a method for preparing high-performance metal compounds. In this method, the oxides or halides of germanium and tellurium are electrolyzed in an electrolyte to form GeTe compounds by electrochemical reaction. The advantages of the electrolysis method are that GeTe compounds with high purity and high performance can be prepared, and the resulting products have fewer crystal structures and defects and better properties. However, the disadvantage of this method is that the preparation conditions are high, the cost is high, and it is not suitable for large-scale production.

Applicationes of Germanium Telluride GeTe Powder :

Electronic device field

Because of its high electron mobility and direct bandgap properties, germanium telluride is widely used to manufacture high-speed electronic devices. In these devices, germanium telluride can be used as a conductive material with higher switching speeds and lower power consumption. In addition, germanium telluride can manufacture photoelectric devices, such as photodiodes, phototransistors, and photocells. These optoelectronic devices have a wide range of applications in communication, sensing, and energy.

Field of thermoelectric conversion devices

Germanium telluride is an excellent thermoelectric material with high thermoelectric conversion efficiency. It has a high Seebeck coefficient of about 400 μV/K, which allows it to convert heat energy into electricity. Therefore, germanium telluride is widely used in the manufacture of thermoelectric conversion devices, such as thermoelectric generators, thermoelectric refrigerators, and thermoelectric sensors. These thermoelectric conversion devices have many applications in energy, environmental protection, and medical fields.

Infrared detector field

Germanium telluride is widely used to manufacture infrared detectors because of its high transmittance and light solid absorption capacity in the infrared region. Compared with traditional silicon-based sensors, germanium telluride infrared detectors have higher response speed, more comprehensive spectral response range, and higher sensitivity. Therefore, the germanium telluride infrared detector has a wide range of applications in military, security, and environmental protection.

In the field of light modulators

Because of its direct bandgap properties and high refractive index, germanium telluride is widely used to manufacture optical modulators. In light modulators, germanium telluride can be used as a photoconductive material to control light transmission by changing its resistance value. Compared with traditional silicon-based modulators, germanium telluride modulators have faster response speed and higher modulation efficiency. Therefore, germanium telluride modulators have a wide range of applications in high-speed optical communication and optical signal processing.

Magnetic memory device field

Although germanium telluride itself is not a magnetic material, it can be made ferromagnetic by doping certain elements, such as Mn. This makes it a potential application in magnetic memory devices. In addition, it can also use its ferromagnetism to manufacture special electronic devices, such as spin valves and magnetic random access memory.

Solar cell field

Germanium telluride has been widely used in solar cells because of its direct band gap properties, high transmittance, and light solid absorption capacity. Compared with traditional silicon-based solar cells, germanium telluride solar cells have a higher light absorption coefficient and a more comprehensive spectral response range. In addition, due to its high-temperature stability and high electron mobility, germanium telluride solar cells perform well in high-temperature and high-humidity environments. Therefore, germanium telluride solar cells are widely used in photovoltaic power generation.

Germanium Telluride GeTe Pulver Storage Conditions：
GeTe powder's dispersion and usage performance will be affected by the damp reunion. GeTe GeTe should therefore be vacuum packed and kept in cool dry rooms. GeTe powder shouldn't be exposed to stress.

Packing and Shipping Germanium Telluride geTe Powder :
We offer many packing options that are dependent on the amount of germanium Telluride GeTe.
Germanium-tetrahydrogeTe powder packaging You can vacuum pack 100g, 500g, 1kg/bag or 25kg/barrel. Or as you request.
Germanium Telluride GeTe Powder Shipping These can all be sent out via sea or air as soon as payment receipt is received.

Germanium Telluride Properties
Additional Names	germanium monotelluride, germanium(II) telluride, germanium(2+), telluride, and GeTe powder
	12025-39-7
Compound Formula	GeTe
Molecular Weight	200.23
Appearance	Gray Black Powder
Melting Point	725
Boiling Point	N/A
Density	6.14 g/cm3
Solubility of H2O	N/A
Exact	203.827 g/mol
Germanium Telluride Safety & Health Information
Signal word	N/A
Hazard Statements	H302
Hazard Codes	Xn
Risk Codes	R22
Safety statements	N/A
Transport Information	NONH on all transport modes

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